发明授权
- 专利标题： Interconnect structure and method of forming the same
- 专利标题（中）： 互连结构及其形成方法
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申请号： US14461285申请日： 2014-08-15
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公开(公告)号： US09385080B2公开(公告)日： 2016-07-05
- 发明人: Yu-Hung Lin , Mei-Hui Fu , Wei-Jung Lin , You-Hua Chou , Chia-Lin Hsu , Hon-Lin Huang , Shih-Chi Lin
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L21/285 ; H01L21/768 ; H01L23/522 ; H01L23/532
摘要：
An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate; a dielectric layer over the contact layer, wherein the dielectric layer has an opening, the opening exposing a portion of the contact layer; a silicide layer over the exposed portion of the contact layer; a barrier layer along sidewalls of the opening; an alloy layer over the barrier layer; a glue layer over the alloy layer; and a conductive plug over the glue layer.
公开/授权文献
- US20160049362A1 Interconnect Structure and Method of Forming the Same 公开/授权日：2016-02-18
信息查询
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