发明授权
US09385013B2 Method and apparatus of manufacturing a semiconductor device by forming a film on a substrate
有权
通过在基板上形成膜来制造半导体器件的方法和装置
- 专利标题: Method and apparatus of manufacturing a semiconductor device by forming a film on a substrate
- 专利标题(中): 通过在基板上形成膜来制造半导体器件的方法和装置
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申请号: US15011896申请日: 2016-02-01
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公开(公告)号: US09385013B2公开(公告)日: 2016-07-05
- 发明人: Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
- 申请人: Hitachi-Kokusai Electric Inc.
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Kokusai Electric Inc.
- 当前专利权人: Hitachi Kokusai Electric Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: Brundidge & Stanger, P.C.
- 优先权: JP2008-300891 20081126; JP2009-246707 20091027
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/318 ; H01L21/314 ; H01L21/67 ; C23C16/50 ; C23C16/455 ; C23C16/52 ; C23C16/46 ; C23C16/02
摘要:
Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: (a) forming a discontinuous first layer including the first element and having a thickness of less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate; and (b) forming a second layer including the first element and the second element by supplying a gas containing the second element into the process vessel to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.
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