发明授权
- 专利标题： Self-aligned ITO gate electrode for GaN HEMT device
- 专利标题（中）： 用于GaN HEMT器件的自对准ITO栅电极
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申请号： US14660281申请日： 2015-03-17
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公开(公告)号： US09385001B1公开(公告)日： 2016-07-05
- 发明人: Yongxiang He , Xinyu Zhang
- 申请人： Toshiba Corporation
- 申请人地址： JP Tokyo
- 专利权人： Toshiba Corporation
- 当前专利权人： Toshiba Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： White & Case LLP
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L29/47 ; H01L29/423 ; H01L29/66 ; H01L21/285 ; H01L21/02
摘要：
A P-N junction gate high electron mobility transistor (HEMT) device with a self-aligned gate structure and a method for making the HEMT device is disclosed. In one embodiment, the HEMT device includes a heterojunction comprising a barrier layer formed on a channel layer. A gate layer is formed on the barrier layer, the gate layer comprising a P-type group III-V semiconductor material suitable for depleting the carriers of a current conducting channel at the heterojunction when the HEMT device is off. A gate electrode comprising indium tin oxide (ITO) is formed on the gate layer, the gate electrode and the gate layer having substantially the same length.
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