发明授权
- 专利标题： Carbon layer and method of manufacture
- 专利标题（中）： 碳层及其制造方法
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申请号： US14834081申请日： 2015-08-24
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公开(公告)号： US09384991B2公开(公告)日： 2016-07-05
- 发明人: Mark van Dal
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/285 ; H01L21/02 ; H01L29/16 ; H01L29/423 ; H01L29/786 ; H01L21/324 ; H01L29/40
摘要：
A system and method for manufacturing a carbon layer is provided. An embodiment comprises depositing a first metal layer on a substrate, the substrate comprising carbon. A silicide is eptiaxially grown on the substrate, the epitaxially growing the silicide also forming a layer of carbon over the silicide. In an embodiment the carbon layer is graphene, and may be transferred to a semiconductor substrate for further processing to form a channel within the graphene.
公开/授权文献
- US20150364329A1 Carbon Layer and Method of Manufacture 公开/授权日：2015-12-17
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