发明授权
- 专利标题： Memory device
- 专利标题（中）： 内存设备
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申请号： US13847677申请日： 2013-03-20
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公开(公告)号： US09384829B2公开(公告)日： 2016-07-05
- 发明人: Hironobu Furuhashi , Iwao Kunishima , Susumu Shuto , Yoshiaki Asao , Gaku Sudo
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 代理机构： Holtz, Holtz & Volek PC
- 优先权： JP2012-284823 20121227
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; H01L45/00 ; G11C11/56 ; H01L27/24
摘要：
A memory device includes n (n being an integer of 2 or more) resistance change films being series connected to each other. Each of the resistance change films is a superlattice film in which plural pairs of a first crystal layer made of a first compound and a second crystal layer made of a second compound are alternately stacked. An average composition of the entire resistance change film or an arrangement pitch of the first crystal layers and the second crystal layers are mutually different among the n resistance change films.
公开/授权文献
- US20140185359A1 MEMORY DEVICE 公开/授权日：2014-07-03
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