One embodiment describes a quantum memory system. The system includes a plurality of quantum memory cells arranged in an array of rows and columns. Each of the plurality of quantum memory cells can be configured to store a binary logic state in response to write currents in a write operation and configured to provide an indication of the binary logic state in response to read currents in a read operation. The system also includes an array controller comprising a plurality of flux pumps configured to provide the write currents and the read currents with respect to the rows and columns. The array controller can be configured to control timing associated with the write operation and the read operation in response to memory request signals based on application of the write currents and the read currents and based on recharging flux associated with the plurality of flux pumps.