发明授权
- 专利标题: Fully valid-gated read and write for low power array
- 专利标题(中): 低功耗阵列的完全有效门控读写
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申请号: US14698843申请日: 2015-04-29
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公开(公告)号: US09384795B1公开(公告)日: 2016-07-05
- 发明人: David Paul Hoff , Jason Philip Martzloff , Robert Andrew Sweitzer
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理机构: Muncy, Geissler, Olds & Lowe, P.C.
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; G11C7/12 ; G11C7/22
摘要:
In an array that qualifies each row according to a valid/invalid state, each row may each include valid-gated read circuitry to conditionally block a read wordline from toggling unless the row stores a data word that has a valid state or a read force signal is asserted. Furthermore, in a write operation, each row may have valid-gated write circuitry that conditionally blocks a write wordline from toggling unless input data to be written to the row has a valid state or a write force signal is asserted. Moreover, output latch clocking may be blocked from toggling unless a row to be read stores a data word that has a valid state or the read force signal is asserted, and input latch clocking may also be blocked unless the input data to be written has a valid state or the write force signal is asserted.
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