发明授权
- 专利标题： FinFETs and the methods for forming the same
- 专利标题（中）： FinFET及其形成方法
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申请号： US14258615申请日： 2014-04-22
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公开(公告)号： US09379217B2公开(公告)日： 2016-06-28
- 发明人: Chia-Cheng Ho , Tzu-Chiang Chen , Yi-Tang Lin , Chih-Sheng Chang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L29/06
摘要：
A method includes providing a plurality of semiconductor fins parallel to each other, and includes two edge fins and a center fin between the two edge fins. A middle portion of each of the two edge fins is etched, and the center fin is not etched. A gate dielectric is formed on a top surface and sidewalls of the center fin. A gate electrode is formed over the gate dielectric. The end portions of the two edge fins and end portions of the center fin are recessed. An epitaxy is performed to form an epitaxy region, wherein an epitaxy material grown from spaces left by the end portions of the two edge fins are merged with an epitaxy material grown from a space left by the end portions of the center fin to form the epitaxy region. A source/drain region is formed in the epitaxy region.
公开/授权文献
- US20140239414A1 FinFETs and the Methods for Forming the Same 公开/授权日：2014-08-28
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