- 专利标题： Semiconductor device and manufacturing method of semiconductor device
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申请号： US14745340申请日： 2015-06-19
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公开(公告)号： US09379127B2公开(公告)日： 2016-06-28
- 发明人: Koichi Toba , Yasushi Ishii , Hiraku Chakihara , Kota Funayama , Yoshiyuki Kawashima , Takashi Hashimoto
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Shapiro, Gabor and Rosenberger, PLLC
- 优先权： JP2010-262394 20101125
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L27/115 ; H01L21/28 ; H01L29/423
摘要：
A semiconductor device with a nonvolatile memory is provided which has improved characteristics. The semiconductor device includes a control gate electrode, a memory gate electrode disposed adjacent to the control gate electrode, a first insulating film, and a second insulating film including therein a charge storing portion. Among these components, the memory gate electrode is formed of a silicon film including a first silicon region positioned over the second insulating film, and a second silicon region positioned above the first silicon region. The second silicon region contains p-type impurities, and the concentration of p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.
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