Invention Grant
US09367662B2 Fault injection of finFET devices 有权
finFET器件的故障注入

Fault injection of finFET devices
Abstract:
A device layout tool includes a gate electrode layer, wherein the gate electrode layer is configured to define a three dimensional gate structure over a fin structure, wherein the fin structure has three exposed surfaces. The device layout tool further includes a defect-describing layer, wherein the defect-describing layer is configured to define locations of gate defects relative to the three exposed surfaces of the fin structure.
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