Invention Grant
- Patent Title: Fault injection of finFET devices
- Patent Title (中): finFET器件的故障注入
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Application No.: US14605485Application Date: 2015-01-26
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Publication No.: US09367662B2Publication Date: 2016-06-14
- Inventor: Atul Katoch , Saman M. I. Adham , Cormac Michael O'Connell
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A device layout tool includes a gate electrode layer, wherein the gate electrode layer is configured to define a three dimensional gate structure over a fin structure, wherein the fin structure has three exposed surfaces. The device layout tool further includes a defect-describing layer, wherein the defect-describing layer is configured to define locations of gate defects relative to the three exposed surfaces of the fin structure.
Public/Granted literature
- US20150143315A1 FAULT INJECTION OF FINFET DEVICES Public/Granted day:2015-05-21
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