发明授权
- 专利标题： Semiconductor devices comprising floating gate transistors and methods of forming such semiconductor devices
- 专利标题（中）： 包括浮栅晶体管的半导体器件和形成这种半导体器件的方法
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申请号： US14223410申请日： 2014-03-24
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公开(公告)号： US09356157B2公开(公告)日： 2016-05-31
- 发明人: Gurtej S. Sandhu , Chandra V. Mouli , Di Li
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L51/52 ; H01L51/56 ; H01L21/28 ; H01L29/423 ; H01L29/66
摘要：
Semiconductor devices include one or more transistors having a floating gate and a control gate. In at least one embodiment, the floating gate comprises an intermediate portion extending between two end portions. The intermediate portion has an average cross-sectional area less than one or both of the end portions. In some embodiments, the intermediate portion may comprise a single nanowire. In additional embodiments, semiconductor devices have one or more transistors having a control gate and a floating gate in which a surface of the control gate opposes a lateral side surface of a floating gate that defines a recess in the floating gate. Electronic systems include such semiconductor devices. Methods of forming semiconductor devices include, for example, forming a floating gate having an intermediate portion extending between two end portions, and configuring the intermediate portion to have an average cross-sectional area less than one or both of the end portions.
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