Invention Grant
US09341950B2 Method of forming patterned layer, method of forming patterned photoresist layer, and active device array substrate
有权
形成图案层的方法，形成图案化光致抗蚀剂层的方法和有源器件阵列衬底
- Patent Title: Method of forming patterned layer, method of forming patterned photoresist layer, and active device array substrate
- Patent Title (中): 形成图案层的方法，形成图案化光致抗蚀剂层的方法和有源器件阵列衬底
-
Application No.: US14722166Application Date: 2015-05-27
-
Publication No.: US09341950B2Publication Date: 2016-05-17
- Inventor: Hsiang-Chih Hsiao , Ta-Wen Liao , Tzu-Min Yang , Shan-Fang Chen , Ya-Ping Chang , Chi-Hung Yang , Chung-Yuan Liao
- Applicant: Au Optronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW99107470A 20100315
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; G03F7/20 ; G03B27/58 ; G03F1/00 ; G02F1/1335
Abstract:
An exposure apparatus is provided and adapted for exposing a photoresist layer on a layer to form a plurality of strip exposed patterns. The exposure apparatus includes a light source, a lens group and a mask. The lens group is disposed between the photoresist layer and the light source and includes a plurality of strip lens parallel to each other, wherein an overlapping region between any two neighboring strip lens is defined as a lens connecting region, and the other regions excluding the lens connecting regions are defined as lens regions. The mask is disposed between the photoresist layer and the lens group and includes a plurality of shielding patterns, wherein an outline of the shielding patterns corresponds to the strip exposed patterns, each shielding pattern has a strip opening, and an extension direction of the strip openings is substantially parallel to an extension direction of the shielding patterns.
Public/Granted literature
Information query
IPC分类:
