- 专利标题： Replacement gate MOSFET with a high performance gate electrode
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申请号： US14571628申请日： 2014-12-16
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公开(公告)号： US09337289B2公开(公告)日： 2016-05-10
- 发明人: Zhengwen Li , Dechao Guo , Randolph F. Knarr , Chengwen Pei , Gan Wang , Yanfeng Wang , Keith Kwong Hon Wong , Jian Yu , Jun Yuan
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L29/78
摘要：
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.
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