发明授权
US09312154B2 CVD apparatus for improved film thickness non-uniformity and particle performance
有权
CVD装置用于改善膜厚不均匀性和颗粒性能
- 专利标题： CVD apparatus for improved film thickness non-uniformity and particle performance
- 专利标题（中）： CVD装置用于改善膜厚不均匀性和颗粒性能
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申请号： US12763522申请日： 2010-04-20
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公开(公告)号： US09312154B2公开(公告)日： 2016-04-12
- 发明人: Binh Tran , Anqing Cui , Bernard L. Hwang , Son T. Nguyen , Anh N. Nguyen , Sean M. Seutter , Xianzhi Tao
- 申请人： Binh Tran , Anqing Cui , Bernard L. Hwang , Son T. Nguyen , Anh N. Nguyen , Sean M. Seutter , Xianzhi Tao
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser Taboada
- 代理商 Alan Taboada
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; C23C16/455 ; C23C16/44 ; H01L21/687
摘要：
Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.
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