发明授权
- 专利标题： Reliable passivation layers for semiconductor devices
- 专利标题（中）： 可靠的半导体器件钝化层
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申请号： US14060582申请日： 2013-10-22
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公开(公告)号： US09293388B2公开(公告)日： 2016-03-22
- 发明人: Xuesong Rao , Meng Meng Vanessa Chong , Chim Seng Seet , Hendro Mario , Aison John George , Chor Shu Cheng
- 申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 申请人地址： SG Singapore
- 专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Horizon IP Pte. Ltd.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L23/31 ; H01L21/768
摘要：
Device and method for forming a device are disclosed. A substrate which is prepared with a dielectric layer having a top metal level of the device is provided. The top metal level includes top level conductive lines. A top dielectric layer which includes top via openings in communication with the top level conductive lines is formed over the top metal level. A patterned top conductive layer is formed on the top dielectric layer. The patterned top conductive layer includes a top via in the top via opening and a top conductive line. A first passivation sub-layer is formed to line the patterned conductive layer and exposed top dielectric layer. A plasma treatment is performed on the surface of the first passivation sub-layer to form a nitrided layer. A second passivation sub-layer is formed to line the nitrided layer. The plasma treatment improves the passivation integrity of the passivation stack.
公开/授权文献
- US20150108654A1 RELIABLE PASSIVATION LAYERS FOR SEMICONDUCTOR DEVICES 公开/授权日：2015-04-23
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