Invention Grant
- Patent Title: Method and structure for resistive switching random access memory with high reliable and high density
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Application No.: US14697849Application Date: 2015-04-28
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Publication No.: US09286979B2Publication Date: 2016-03-15
- Inventor: Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; H01L45/00 ; H01L27/24
Abstract:
The present disclosure provides a resistive random access memory (RRAM) structure. The RRAM structure includes a bottom electrode on a substrate; a resistive material layer on the bottom electrode, the resistive material layer having filament features with a filament ratio greater than about 0.5; and a top electrode on the resistive material layer.
Public/Granted literature
- US20150235698A1 Method And Structure For Resistive Switching Random Access Memory With High Reliable And High Density Public/Granted day:2015-08-20
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