发明授权
- 专利标题： FinFET with high breakdown voltage characteristics
- 专利标题（中）： FinFET具有高击穿电压特性
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申请号： US14716575申请日： 2015-05-19
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公开(公告)号： US09281399B2公开(公告)日： 2016-03-08
- 发明人: Chia-Hsin Hu , Sun-Jay Chang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/78 ; H01L29/66 ; H01L29/36 ; H01L27/088
摘要：
A fin field effect transistor (FinFET) and a method of forming the same are introduced. In an embodiment, trenches are formed in a substrate, wherein a region between adjacent trenches defines a fin. A dielectric material is formed in the trenches. A part of the substrate is doped and a region of high dopant concentration and a region of low dopant concentration are formed. Gate stacks are formed, portions of the fins are removed and source/drain regions are epitaxially grown in the regions of high/low dopant concentration. Contacts are formed to provide electrical contacts to source/gate/drain regions.
公开/授权文献
- US20150270396A1 FinFET Device and Method 公开/授权日：2015-09-24
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