发明授权
US09281307B2 Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
有权
等离子体掺杂以减少在栅极结构中去除虚设层时的介质损耗
- 专利标题： Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
- 专利标题（中）： 等离子体掺杂以减少在栅极结构中去除虚设层时的介质损耗
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申请号： US13854251申请日： 2013-04-01
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公开(公告)号： US09281307B2公开(公告)日： 2016-03-08
- 发明人: Yu-Lien Huang , Chia-Pin Lin , Sheng-Hsiung Wang , Fan-Yi Hsu , Chun-Liang Tai
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/66 ; H01L29/51
摘要：
A semiconductor device which includes a first gate structure on a substrate and a second gate structure on the substrate is provided. The semiconductor device further includes an inter-level dielectric (ILD) layer on the substrate between the first gate structure and the second gate structure, wherein a top portion of the ILD layer has a different etch selectivity than a bottom portion of the ILD layer.
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