- 专利标题： Gate-all-around metal-oxide-semiconductor transistors with gate oxides
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申请号： US14725719申请日： 2015-05-29
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公开(公告)号： US09257535B2公开(公告)日： 2016-02-09
- 发明人: Seung-Chang Lee , Steven Brueck , Daniel Feezell
- 申请人： Seung-Chang Lee , Steven Brueck , Daniel Feezell
- 申请人地址： US NM Albuquerque
- 专利权人： STC.UNM
- 当前专利权人： STC.UNM
- 当前专利权人地址： US NM Albuquerque
- 代理机构： MH2 Technology Law Group, LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/66 ; H01L29/06 ; H01L29/40 ; H01L29/423 ; H01L29/16 ; H01L29/20 ; H01L21/02 ; B82Y10/00
摘要：
A method and structure for a semiconductor transistor, including various embodiments. In embodiments, a transistor channel can be formed between a semiconductor source and a semiconductor drain, wherein a transistor gate oxide completely surrounds the transistor channel and a transistor gate metal that completely surrounds the transistor gate oxide. Related fabrication processes are presented for similar device embodiments based on a Group III-V semiconductor material and silicon-on-insulator materials.
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