发明授权
- 专利标题: Methods of forming non-oxygen containing silicon-based films
- 专利标题(中): 形成非含氧硅基膜的方法
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申请号: US13949420申请日: 2013-07-24
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公开(公告)号: US09243324B2公开(公告)日: 2016-01-26
- 发明人: Heather Regina Bowen , Jianheng Li , Mark Leonard O'Neill , Manchao Xiao , Andrew David Johnson , Xinjian Lei
- 申请人: AIR PRODUCTS AND CHEMICALS, INC.
- 申请人地址: US PA Allentown
- 专利权人: Air Products and Chemicals, Inc.
- 当前专利权人: Air Products and Chemicals, Inc.
- 当前专利权人地址: US PA Allentown
- 代理商 Rosaleen P. Morris-Oskanian
- 主分类号: C23C16/30
- IPC分类号: C23C16/30 ; C23C16/32 ; C23C16/36
摘要:
Methods for forming non-oxygen containing silicon-based films, that contain >50 atomic % of silicon, are provided herein. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.
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