发明授权
- 专利标题: Overvoltage protection for electrically conductive structures
- 专利标题(中): 导电结构的过电压保护
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申请号: US13878650申请日: 2011-10-10
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公开(公告)号: US09240684B2公开(公告)日: 2016-01-19
- 发明人: Andreas Ullmann , Thomas Herbst , Ludwig Brehm , Haymo Katschorek
- 申请人: Andreas Ullmann , Thomas Herbst , Ludwig Brehm , Haymo Katschorek
- 申请人地址: DE Furth
- 专利权人: PolyIC GmbH & CO. KG
- 当前专利权人: PolyIC GmbH & CO. KG
- 当前专利权人地址: DE Furth
- 代理商 William Squire
- 优先权: DE102010047912 20101011
- 国际申请: PCT/EP2011/005050 WO 20111010
- 国际公布: WO2012/048840 WO 20120419
- 主分类号: H02H9/00
- IPC分类号: H02H9/00 ; H02H9/04 ; H05K1/02 ; H05K13/04 ; H05K1/16
摘要:
There is described a structure (14) that is disposed on an electrically non-conductive, electrostatically chargeable strip-type carrier film (12) and that has electrically conductive and/or semiconducting structural elements, which structure has at least one structural region (14s) protected against electrostatic voltage flashover. The at least one structural region (14s) protected against electrostatic voltage flashover is connected to a protective conductor track (19) and/or surrounded by a protective conductor track (19, 19′), which is realized such that it discharges an electrostatic charge and/or shields the protected structural region (14s).
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