Methods of fabricating fin structures having exposed upper fin portions with a uniform exposure height are disclosed herein. The fabrication methods include providing a substrate with plurality of fins and a dielectric material disposed between and over the plurality of fins, planarizing the dielectric material and the plurality of fins, and uniformly recessing the dielectric material to a pre-selected depth below upper surfaces of the plurality of fins to expose upper fin portions. The exposed upper fin portions, as a result of uniformly recessing the dielectric material, have a uniform exposure height above the recessed dielectric material. A protective film may be provided over the recessed dielectric material and exposed upper fin portions to preserve the uniform exposure height of the upper fin portions. The uniform exposure height of the exposed upper fin portions facilitates subsequent formation of one or more circuit structures above the substrate.