- 专利标题： Magnetoresistive element and magnetic memory
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申请号： US14549254申请日： 2014-11-20
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公开(公告)号： US09219227B2公开(公告)日： 2015-12-22
- 发明人: Tadaomi Daibou , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
- 申请人： KABUSHIKI KAISHA TOSHIBA , WPI-AIMR, Tohoku University
- 申请人地址： JP Minato-Ku JP Sendai-Shi
- 专利权人： KABUSHIKI KAISHA TOSHIBA,WPI-AIMR, Tohoku University
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA,WPI-AIMR, Tohoku University
- 当前专利权人地址： JP Minato-Ku JP Sendai-Shi
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-068868 20110325
- 主分类号： H01L43/00
- IPC分类号： H01L43/00 ; H01L43/10 ; H01L43/08 ; H01L27/22 ; H01L23/528 ; H01L43/02
摘要：
A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
公开/授权文献
- US20150076635A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 公开/授权日：2015-03-19
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