发明授权
- 专利标题： Three-direction alignment mark
- 专利标题（中）： 三向对准标记
-
申请号： US14192225申请日： 2014-02-27
-
公开(公告)号： US09217917B2公开(公告)日： 2015-12-22
- 发明人: Ru-Shang Hsiao , I-I Cheng , Jia-Ming Huang , Jen-Pan Wang , Ling-Sung Wang , Chih-Mu Huang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; G03F1/42 ; H01L23/544 ; H01L21/027 ; G06T7/00
摘要：
A semiconductor device includes a first material formed on a substrate. The first material includes a first alignment mark. The first alignment mark includes alignment lines in at least three directions. The semiconductor device further includes a second material comprising a second alignment mark. The second alignment mark corresponds to the first alignment mark such that when the second alignment mark is aligned with the first alignment mark, the second material is aligned with the first material.
公开/授权文献
- US20150241768A1 Three-Direction Alignment Mark 公开/授权日：2015-08-27
信息查询
IPC分类:
