发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US14450247申请日: 2014-08-03
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公开(公告)号: US09214217B2公开(公告)日: 2015-12-15
- 发明人: Natsuki Ikehata , Kazuo Tanaka , Takeo Toba , Masashi Arakawa
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Tokyo
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2011-185608 20110829
- 主分类号: H03F3/45
- IPC分类号: H03F3/45 ; G11C11/4076 ; G11C7/10 ; G11C11/4093 ; G11C11/4096 ; G11C11/4091
摘要:
An output signal characteristic of a differential amplifier circuit is improved. When an input data signal becomes ‘Low’, current flowing through a first transistor will decrease and potential at a connection (a node) between a first resistor and a second resistor will increase. This potential is input (negatively fed back) to the gate of a second transistor, and because this gate potential increases, a tail current amount is adjusted in an increasing direction. When the input data signal becomes ‘High’, the current of the first transistor increases and thus the potential at the node decreases. Thus, the gate potential (negative feedback) of the second transistor decreases, and the tail current amount is adjusted in a decreasing direction. Thus, in the rising and falling of an input waveform, the difference in a delay time with respect to the output waveform decreases, respectively.
公开/授权文献
- US20140334240A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 公开/授权日:2014-11-13
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