发明授权
- 专利标题: Production method of high-density SIM card package
- 专利标题(中): 高密度SIM卡封装的生产方法
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申请号: US13883672申请日: 2010-12-30
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公开(公告)号: US09210813B2公开(公告)日: 2015-12-08
- 发明人: Jianyou Xie , Xiaowei Guo , Wenhai He , Wei Mu , Xin Chen
- 申请人: Jianyou Xie , Xiaowei Guo , Wenhai He , Wei Mu , Xin Chen
- 申请人地址: CN Tianshui
- 专利权人: TIANSHUI HUATIAN TECHNOLOGY CO., LTD.
- 当前专利权人: TIANSHUI HUATIAN TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Tianshui
- 代理机构: Hamre, Schumann, Mueller & Larson, P.C.
- 优先权: CN201010564456 20101130
- 国际申请: PCT/CN2010/080542 WO 20101230
- 国际公布: WO2012/071759 WO 20120607
- 主分类号: H05K3/30
- IPC分类号: H05K3/30 ; H05K1/18 ; H01L23/00 ; H05K3/00 ; H01L23/31 ; H01L23/498 ; H01L25/065
摘要:
A high-density Subscriber Identity Module (SIM) card package and a production method thereof are provided. The SIM card package includes a substrate, an Integrated Circuit (IC) chip, a bonding wire, and a mold cap. The substrate is a two-layer, a four-layer, a six-layer or an eight-layer high-density interlinked and packaged organic laminated substrate that is manufactured through an etching-back process, and a passive device and a crystal oscillator are provided on the organic laminated substrate. Two IC chips are provided side by side, or one of the IC chips is stacked with a third IC chip, the third IC chip being respectively connected to the organic laminated substrate and the IC chip under the third IC chip by the bonding wire. The IC chip, the passive device, and the crystal oscillator are adhered to the organic laminated substrate.
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