发明授权
- 专利标题: Read retry for non-volatile memories
- 专利标题(中): 重读非易失性存储器
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申请号: US14135837申请日: 2013-12-20
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公开(公告)号: US09209835B2公开(公告)日: 2015-12-08
- 发明人: AbdelHakim S. Alhussien , Erich F. Haratsch , Sundararajan Sankaranarayanan , YingQuan Wu
- 申请人: Seagate Technology LLC
- 申请人地址: US CA Cupertino
- 专利权人: Seagate Technology LLC
- 当前专利权人: Seagate Technology LLC
- 当前专利权人地址: US CA Cupertino
- 代理机构: Cesari & Reed LLP
- 代理商 Kirk A. Cesari
- 主分类号: H03M13/03
- IPC分类号: H03M13/03 ; H03M13/11 ; G11C11/56 ; G11C16/28 ; G11C29/02
摘要:
An apparatus for reading a non-volatile memory includes a tracking module operable to calculate means and variances of voltage level distributions in a non-volatile memory and to calculate at least one reference voltage to be used when reading the non-volatile memory based on the means and variances, a likelihood generator operable to calculate at least one other reference voltage to be used when reading the non-volatile memory, wherein the at least one other reference voltage is based at least in part on a predetermined likelihood value constellation, and to map read patterns from the non-volatile memory to likelihood values, and a read controller operable to read the non-volatile memory using the at least one reference voltage and the at least one other reference voltage to yield the read patterns.
公开/授权文献
- US20150149840A1 Read Retry For Non-Volatile Memories 公开/授权日:2015-05-28
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