Provided is a semiconductor storage device with which it is possible to write information to individual memory cells in which a storage node is configured with an oxide semiconductor insulated-gate FET source and a terminal of a capacitor element being connected. A storage node is configured by connecting a source of a first transistor to one terminal of a capacitor element. A drain of the first transistor and a source of a second transistor are connected to each other. A drain of the second transistor is a data input terminal. A first control terminal, which is formed by a gate of the first transistor being connected to another terminal of the capacitor element, is connected to a wordline, which extends in the row direction. A second control terminal, which is formed of a gate of the second transistor terminal, is connected to a write control line, which extends in the column direction. The storage node is connected to a gate of a third transistor, and a current flowing between a drain and a source of the third transistor is controlled according to a voltage level of the storage node.