发明授权
US09202534B2 Semiconductor memory device performing pre-read and main read, memory system including the same and method of operating the same
有权
执行预读和主读取的半导体存储器件，包括其的存储器系统及其操作方法
- 专利标题： Semiconductor memory device performing pre-read and main read, memory system including the same and method of operating the same
- 专利标题（中）： 执行预读和主读取的半导体存储器件，包括其的存储器系统及其操作方法
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申请号： US13803493申请日： 2013-03-14
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公开(公告)号： US09202534B2公开(公告)日： 2015-12-01
- 发明人: Chi Wook An
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2012-0131766 20121120
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C7/10 ; G11C11/56 ; G11C16/04 ; G11C16/06 ; G11C7/22
摘要：
A method of operating a semiconductor memory device includes performing a pre-read and a first main read to selected memory cells in response to a read request, and performing a second main read to the selected memory cells in response to a re-read request.
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