Invention Grant
US09183939B2 Nonvolatile memory device, a memory system having the same, and a read method thereof, the read method applying a read pass voltage to a selected wordline after a sensing
有权
非易失性存储器件，具有其的存储器系统及其读取方法，该读取方法在感测之后将读通过电压施加到所选择的字线
- Patent Title: Nonvolatile memory device, a memory system having the same, and a read method thereof, the read method applying a read pass voltage to a selected wordline after a sensing
- Patent Title (中): 非易失性存储器件，具有其的存储器系统及其读取方法，该读取方法在感测之后将读通过电压施加到所选择的字线
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Application No.: US14242332Application Date: 2014-04-01
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Publication No.: US09183939B2Publication Date: 2015-11-10
- Inventor: Sang-Wan Nam , Kitae Park , Hyun-Wook Park , Jae-Kyun Rhee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0074576 20130627
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/26 ; G11C11/56 ; G11C16/04 ; G11C16/34
Abstract:
A method of reading a nonvolatile memory device including: applying a read voltage to a selected wordline of the nonvolatile memory device; applying a read pass voltage to unselected wordlines of the nonvolatile memory device; sensing a state of a memory cell connected to the selected wordline; and applying the read pass voltage to the selected wordline after the sensing.
Public/Granted literature
- US20150003169A1 NONVOLATILE MEMORY DEVICE, A MEMORY SYSTEM HAVING THE SAME, AND A READ METHOD THEREOF Public/Granted day:2015-01-01
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