发明授权
- 专利标题： Resistive random access memory and method of fabricating the same
- 专利标题（中）： 电阻随机存取存储器及其制造方法
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申请号： US14481925申请日： 2014-09-10
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公开(公告)号： US09166160B1公开(公告)日： 2015-10-20
- 发明人: Chia-Hua Ho , Shuo-Che Chang , Hsiu-Han Liao , Po-Yen Hsu , Meng-Hung Lin , Bo-Lun Wu , Ting-Ying Shen
- 申请人： Winbond Electronics Corp.
- 申请人地址： TW Taichung
- 专利权人： Winbond Electronics Corp.
- 当前专利权人： Winbond Electronics Corp.
- 当前专利权人地址： TW Taichung
- 代理机构： Jianq Chyun IP Office
- 优先权： TW103112331A 20140402
- 主分类号： H01L47/00
- IPC分类号： H01L47/00 ; H01L21/20 ; H01L45/00
摘要：
Provided is a resistive random access memory including a first electrode layer, a second electrode layer, and a variable resistance layer disposed between the first electrode layer and the second electrode layer, wherein the second electrode layer includes a first sublayer, a second sublayer, and a conductive metal oxynitride layer disposed between the first sublayer and the second sublayer.
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