Invention Grant
- Patent Title: PIN structure semiconductor optical receiver
- Patent Title (中): PIN结构半导体光接收机
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Application No.: US13922566Application Date: 2013-06-20
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Publication No.: US09166091B2Publication Date: 2015-10-20
- Inventor: Christophe Kopp , Jean-Marc Fedeli , Sylvie Menezo
- Applicant: Commissariat a l'energie atomique et aux energies alternatives
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ÉNERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ÉNERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Occhiuti & Rohlicek LLP
- Priority: FR1255772 20120620
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/105 ; H01L31/0352 ; H01L31/0336
Abstract:
A PIN structure semiconductor optical receiver includes first and second electrical contact layers and an intrinsic layer disposed between them. The intrinsic layer includes a stud having a stud axis and a stud cross-section. The first and second contact layers have dimensions in a plane perpendicular to the stud axis that are greater than the stud's cross-section. These layers are also elongated and have longitudinal axes offset angularly relative to each other to minimize facing areas of said electrical contact layers.
Public/Granted literature
- US20130344643A1 PIN structure semiconductor optical receiver Public/Granted day:2013-12-26
Information query
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