A particular method includes selecting a threshold data retention time of a magnetic tunnel junction (MTJ) memory cell. A pinned layer of the MTJ memory cell has a first direction of magnetization, and a free layer of the MTJ memory cell has a second direction of magnetization. An external magnetic field that has a third direction of magnetization that is opposite to the second direction of magnetization is applied to the MTJ memory cell. A strength of the external magnetic field is determined based on the threshold data retention time. Subsequent to applying the external magnetic field, a read operation is performed on the MTJ memory cell to determine a logic value of the MTJ memory cell. The method further includes determining whether the MTJ memory cell is subject to a data retention error corresponding to the threshold data retention time based on the logic value.