发明授权
- 专利标题： Semiconductor device wherein an oxide semiconductor layer comprises a crystal and has a degree of crystallization of 80% or more
- 专利标题（中）： 半导体器件，其中氧化物半导体层包含晶体并且结晶度为80％以上
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申请号： US14521716申请日： 2014-10-23
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公开(公告)号： US09153602B2公开(公告)日： 2015-10-06
- 发明人: Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama , Masashi Tsubuku
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2009-185317 20090807; JP2009-206489 20090907
- 主分类号： G02F1/136
- IPC分类号： G02F1/136 ; G02F1/1343 ; H01L27/12
摘要：
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
公开/授权文献
- US20150041806A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2015-02-12
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