Invention Grant
- Patent Title: Epitaxial process
- Patent Title (中): 外延过程
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Application No.: US13756464Application Date: 2013-01-31
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Publication No.: US09117925B2Publication Date: 2015-08-25
- Inventor: Chia-Jui Liang , Po-Chao Tsao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L29/165
Abstract:
An epitaxial process includes the following steps. A substrate including a first area and a second area is provided. A first gate and a second gate are formed respectively on the substrate of the first area and the second area. A first spacer and a second spacer are respectively formed on the substrate beside the first gate and the second gate at the same time. A first epitaxial structure is formed beside the first spacer and then a second epitaxial structure is formed beside the second spacer by the first spacer and the second spacer respectively.
Public/Granted literature
- US20140213028A1 EPITAXIAL PROCESS Public/Granted day:2014-07-31
Information query
IPC分类:
