Invention Grant
- Patent Title: MRAM synthetic anitferomagnet structure
- Patent Title (中): MRAM合成非铁磁结构
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Application No.: US14303200Application Date: 2014-06-12
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Publication No.: US09093637B2Publication Date: 2015-07-28
- Inventor: Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/08 ; H01L43/02 ; H01L27/22
Abstract:
An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
Public/Granted literature
- US20150021606A1 MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE Public/Granted day:2015-01-22
Information query
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