Invention Grant
US09082885B2 Semiconductor chip bonding apparatus and method of forming semiconductor device using the same
有权
半导体芯片接合装置及使用其形成半导体器件的方法
- Patent Title: Semiconductor chip bonding apparatus and method of forming semiconductor device using the same
- Patent Title (中): 半导体芯片接合装置及使用其形成半导体器件的方法
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Application No.: US14283238Application Date: 2014-05-21
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Publication No.: US09082885B2Publication Date: 2015-07-14
- Inventor: Yoshiaki Yukimori , Shinji Ueyama , Masato Kajinami
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: JP2013-114702 20130530; KR10-2014-0044565 20140415
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L21/78 ; H01L21/56

Abstract:
A method of manufacturing a semiconductor device includes: providing a first substrate that includes internal wiring, the first substrate including an array of chip mounting regions that includes a first chip mounting region; placing the first substrate on a first carrier line; providing a first semiconductor chip; placing the first semiconductor chip on a first moveable tray; vertically aligning the first chip mounting region of the first substrate with the first semiconductor chip, and performing initial bonding of the first semiconductor chip to the first chip mounting region of the first substrate; and performing subsequent bonding on the initially-bonded first semiconductor chip and first mounting region of the first substrate, thereby more strongly bonding the first semiconductor chip to the first substrate at the first mounting region. The initial bonding occurs after performing a subsequent bonding of at least one other semiconductor chip on the first substrate.
Public/Granted literature
- US20150024551A1 SEMICONDUCTOR CHIP BONDING APPARATUS AND METHOD OF FORMING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2015-01-22
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