Invention Grant
US09076510B2 Power mixing circuit and semiconductor memory device including the same
有权
功率混合电路和包括其的半导体存储器件
- Patent Title: Power mixing circuit and semiconductor memory device including the same
- Patent Title (中): 功率混合电路和包括其的半导体存储器件
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Application No.: US13619793Application Date: 2012-09-14
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Publication No.: US09076510B2Publication Date: 2015-07-07
- Inventor: Young-Chul Cho , Young-Jin Jeon , Yong-Cheol Bae
- Applicant: Young-Chul Cho , Young-Jin Jeon , Yong-Cheol Bae
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2012-0049067 20120509
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C7/02 ; G11C7/10 ; G11C7/20 ; G11C5/04

Abstract:
A power mixing circuit capable of maintaining a stable output voltage in a deep-power-down mode is provided. The power mixing circuit includes an input buffer, a power mixing control circuit, a power mixing driver and an output buffer. The input buffer is configured to operate using a first supply voltage, and to generate a first voltage signal in response to an input signal. The power mixing control circuit is configured to generate a power mixing control signal based on a power-up signal and a deep-power-down mode signal. The power mixing driver is configured to operate using an external supply voltage and a second supply voltage, to perform power mixing on the external supply voltage and the second supply voltage, and to generate a second voltage signal. The output buffer is configured to operate using the second supply voltage, and to generate an output signal.
Public/Granted literature
- US20130201765A1 POWER MIXING CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2013-08-08
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