发明授权
US09070784B2 Metal gate structure of a CMOS semiconductor device and method of forming the same
有权
CMOS半导体器件的金属栅极结构及其形成方法
- 专利标题： Metal gate structure of a CMOS semiconductor device and method of forming the same
- 专利标题（中）： CMOS半导体器件的金属栅极结构及其形成方法
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申请号： US13189232申请日： 2011-07-22
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公开(公告)号： US09070784B2公开(公告)日： 2015-06-30
- 发明人: Ming Zhu , Bao-Ru Young , Harry Hak-Lay Chuang
- 申请人： Ming Zhu , Bao-Ru Young , Harry Hak-Lay Chuang
- 申请人地址： TW
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L21/338
- IPC分类号： H01L21/338 ; H01L21/8238
摘要：
The invention relates to integrated circuit fabrication, and more particularly to a metal gate structure. An exemplary structure for a CMOS semiconductor device comprises a substrate, an N-metal gate electrode, and a P-metal gate electrode. The substrate comprises an isolation region surrounding a P-active region and an N-active region. The N-metal gate electrode comprises a first metal composition over the N-active region. The P-metal gate electrode comprises a bulk portion over the P-active region and an endcap portion over the isolation region. The endcap portion comprises the first metal composition and the bulk portion comprises a second metal composition different from the first metal composition.
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