Invention Grant
- Patent Title: Semiconductor structure
- Patent Title (中): 半导体结构
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Application No.: US13831879Application Date: 2013-03-15
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Publication No.: US09070782B2Publication Date: 2015-06-30
- Inventor: Tzung-Han Lee , Yaw-Wen Hu , Hung-Chang Liao , Chung-Yuan Lee , Hsu Chiang , Sheng-Hsiung Wu
- Applicant: INOTERA MEMORIES, INC.
- Applicant Address: TW Hwa-Ya Technology Park Kueishan, Taoyuan
- Assignee: INOTERA MEMORIES, INC.
- Current Assignee: INOTERA MEMORIES, INC.
- Current Assignee Address: TW Hwa-Ya Technology Park Kueishan, Taoyuan
- Agent Winston Hsu; Scott Margo
- Priority: TW101140493A 20121101
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L21/8234 ; H01L21/768 ; H01L23/485 ; H01L27/108
Abstract:
A semiconductor structure includes multiple buried gates which are disposed in a substrate and have a first source and a second source, an interlayer dielectric layer covering the multiple buried gates and the substrate as well as a core dual damascene plug including a first plug, a second plug and an insulating slot. The insulating slot is disposed between the first plug and the second plug so that the first plug and the second plug are mutually electrically insulated. The first plug and the second plug respectively penetrate the interlayer dielectric layer and are respectively electrically connected to the first source and the second source.
Public/Granted literature
- US20140117442A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2014-05-01
Information query
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