发明授权
US09070467B2 Memory system including nonvolatile memory device and control method thereof
有权
包括非易失性存储装置的存储系统及其控制方法
- 专利标题: Memory system including nonvolatile memory device and control method thereof
- 专利标题(中): 包括非易失性存储装置的存储系统及其控制方法
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申请号: US13966274申请日: 2013-08-13
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公开(公告)号: US09070467B2公开(公告)日: 2015-06-30
- 发明人: Jinhyun Kim , Taesik Son
- 申请人: Jinhyun Kim , Taesik Son
- 申请人地址: KR
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR
- 代理机构: Renaissance IP Law Group LLP
- 优先权: KR10-2012-0099507 20120907
- 主分类号: G11C11/16
- IPC分类号: G11C11/16 ; G06F13/42
摘要:
A memory system is provided including a host configured to generate data bit inversion (DBI) information of data according to a major bit of the data, and a nonvolatile memory device configured to invert one or more bits of the data according to the DBI information, and to program the DBI information and the data. A control method of a memory system comprises generating DBI information according to the number of “1” bits of data relative to the number of “0” bits of the data, transferring the data and the DBI information, and inverting bits of the data according to the DBI information, the inverted bits of the data being programmed at the nonvolatile memory device.
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