Invention Grant
US09064725B2 FinFET with embedded MOS varactor and method of making same
有权
具有嵌入式MOS变容二极管的FinFET及其制作方法
- Patent Title: FinFET with embedded MOS varactor and method of making same
- Patent Title (中): 具有嵌入式MOS变容二极管的FinFET及其制作方法
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Application No.: US13715684Application Date: 2012-12-14
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Publication No.: US09064725B2Publication Date: 2015-06-23
- Inventor: Wan-Te Chen , Chung-Hui Chen , Jaw-Juinn Horng , Po-Zeng Kang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; H01L27/02 ; H01L27/092 ; H01L27/12 ; H01L29/66 ; H01L27/06
Abstract:
Embodiments of the present disclosure are a semiconductor device, a FinFET device, and a method of forming a FinFET device. An embodiment is semiconductor device including a first FinFET over a substrate, wherein the first FinFET includes a first set of semiconductor fins. The semiconductor device further includes a first body contact for the first FinFET over the substrate, wherein the first body contact includes a second set of semiconductor fins, and wherein the first body contact is laterally adjacent the first FinFET.
Public/Granted literature
- US20140167172A1 FinFET with Embedded MOS Varactor and Method of Making Same Public/Granted day:2014-06-19
Information query
IPC分类:
