According to one embodiment, a nonvolatile semiconductor storage device includes a memory cell array where memory cells are arranged in a cell well in a row direction and a column direction in a matrix; word lines which select the memory cell in the row direction; bit lines which select the memory cell in the column direction; a sense amplifier which determines a value stored in the memory cell based on a potential of the bit line; a peripheral transistor in the memory cell array which is arranged in the periphery of the memory cell array; and an enhancement type transistor which drives a gate of the peripheral transistor.