- 专利标题： Method for manufacturing semiconductor devices having a metallisation layer
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申请号： US14295791申请日： 2014-06-04
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公开(公告)号： US09030028B2公开(公告)日： 2015-05-12
- 发明人: Rudolf Zelsacher , Paul Ganitzer
- 申请人： Infineon Technologies Austria AG
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L21/683 ; H01L21/78 ; H01L23/492 ; H01L23/498 ; H01L29/06 ; H01L23/31
摘要：
A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallization layer is formed on the second surface of the semiconductor substrate. The metallization layer has a thickness which is greater than the device thickness.
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