发明授权
- 专利标题： Method for producing a semiconductor device and field-effect semiconductor device
- 专利标题（中）： 半导体器件和场效应半导体器件的制造方法
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申请号： US13646790申请日： 2012-10-08
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公开(公告)号： US09029243B2公开(公告)日： 2015-05-12
- 发明人: Hans-Joachim Schulze , Peter Irsigler
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L21/322
- IPC分类号： H01L21/322 ; H01L29/78 ; H01L29/06 ; H01L21/223 ; H01L29/36 ; H01L21/265
摘要：
A method for producing a semiconductor device is provided. The method includes providing a wafer including a main surface and a silicon layer arranged at the main surface and having a nitrogen concentration of at least about 3*1014 cm−3, and partially out-diffusing nitrogen to reduce the nitrogen concentration at least close to the main surface. Further, a semiconductor device is provided.
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