Invention Grant
- Patent Title: Method for forming patterned doping regions
- Patent Title (中): 用于形成图案化掺杂区域的方法
-
Application No.: US13710795Application Date: 2012-12-11
-
Publication No.: US09012314B2Publication Date: 2015-04-21
- Inventor: Wen-Ching Sun , Sheng-Min Yu , Tai-Jui Wang , Tzer-Shen Lin
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW101135229A 20120926
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/38 ; H01L21/225 ; H01L31/068 ; H01L31/18
Abstract:
A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.
Public/Granted literature
- US20140087549A1 METHOD FOR FORMING PATTERNED DOPING REGIONS Public/Granted day:2014-03-27
Information query
IPC分类:
