发明授权
- 专利标题： Method to control metal semiconductor micro-structure
- 专利标题（中）： 控制金属半导体微结构的方法
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申请号： US13908624申请日： 2013-06-03
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公开(公告)号： US08987135B2公开(公告)日： 2015-03-24
- 发明人: Christian Lavoie , Ahmet S. Ozcan , Zhen Zhang , Bin Yang
- 申请人： International Business Machines Corporation , GLOBALFOUNDRIES Inc.
- 申请人地址： US NY Armonk KY
- 专利权人： International Business Machines Corporation,GLOBALFOUNDRIES, Inc.
- 当前专利权人： International Business Machines Corporation,GLOBALFOUNDRIES, Inc.
- 当前专利权人地址： US NY Armonk KY
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Yuanmin Cai
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/768 ; H01L21/285 ; H01L23/485 ; H01L29/45 ; H01L29/66
摘要：
A method of forming a metal semiconductor alloy that includes forming an intermixed metal semiconductor region to a first depth of a semiconductor substrate without thermal diffusion. The intermixed metal semiconductor region is annealed to form a textured metal semiconductor alloy. A second metal layer is formed on the textured metal semiconductor alloy. The second metal layer on the textured metal semiconductor alloy is then annealed to form a metal semiconductor alloy contact, in which metal elements from the second metal layer are diffused through the textured metal semiconductor alloy to provide a templated metal semiconductor alloy. The templated metal semiconductor alloy includes a grain size that is greater than 2× for the metal semiconductor alloy, which has a thickness ranging from 15 nm to 50 nm.
公开/授权文献
- US20130267090A1 METHOD TO CONTROL METAL SEMICONDUCTOR MICRO-STRUCTURE 公开/授权日：2013-10-10
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