发明授权
- 专利标题： Semiconductor device, method of manufacturing the same, in-millimeter-wave dielectric transmission device, method of manufacturing the same, and in-millimeter-wave dielectric transmission system
- 专利标题（中）： 半导体装置及其制造方法，毫米波介质传输装置及其制造方法以及毫米波电介质传输系统
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申请号： US13141726申请日： 2009-12-08
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公开(公告)号： US08983399B2公开(公告)日： 2015-03-17
- 发明人: Hirofumi Kawamura , Yasuhiro Okada
- 申请人： Hirofumi Kawamura , Yasuhiro Okada
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Dentons US LLP
- 优先权： JP2009-001922 20090107; JP2009-164506 20090713
- 国际申请： PCT/JP2009/070519 WO 20091208
- 国际公布： WO2010/079663 WO 20100715
- 主分类号： H04B1/38
- IPC分类号： H04B1/38 ; H01L23/48 ; H01L23/66 ; H01L23/00 ; H01L25/065 ; H01L25/10 ; H01P3/12 ; H01Q9/04 ; H01Q23/00
摘要：
Provided is an in-millimeter-wave dielectric transmission device. The in-millimeter-wave dielectric transmission device includes a semiconductor chip provided on one interposer substrate and capable of in-millimeter-wave dielectric transmission, an antenna structure connected to the semiconductor chip, two semiconductor packages including a molded resin configured to cover the semiconductor chip and the antenna structure, and a dielectric transmission path provided between the two semiconductor packages to transmit a millimeter wave signal. The semiconductor packages are mounted such that the antenna structures thereof are arranged with the dielectric transmission path interposed therebetween.
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