Invention Grant
- Patent Title: Cleaning process for microelectronic dielectric and metal structures
- Patent Title (中): 微电子介质和金属结构的清洁工艺
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Application No.: US11782996Application Date: 2007-07-25
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Publication No.: US08968583B2Publication Date: 2015-03-03
- Inventor: Mary Beth Rothwell , Roy Rongqing Yu
- Applicant: Mary Beth Rothwell , Roy Rongqing Yu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/302 ; H01L21/461 ; H01B13/00 ; B44C1/22 ; B23P15/00 ; C03C25/00 ; C23F1/00 ; C03C15/00 ; C03C25/68 ; C25F3/00 ; H01L21/02 ; H01L21/768
Abstract:
A method for cleaning a dielectric and metal structure within a microelectronic structure uses an oxygen containing plasma treatment, followed by an alcohol treatment, in turn followed by an aqueous organic acid treatment. Another method for cleaning a dielectric and metal structure within a microelectronic structure uses an aqueous surfactant treatment followed by an alcohol treatment and finally followed by an aqueous organic acid treatment. The former method may be used to clean a plasma etch residue from a dual damascene aperture. The second method may be used to clean a chemical mechanical polish planarizing residue from a dual damascene structure. The two methods may be used sequentially, absent any intervening or subsequent sputtering method, to provide a dual damascene structure within a microelectronic structure.
Public/Granted literature
- US20090029543A1 CLEANING PROCESS FOR MICROELECTRONIC DIELECTRIC AND METAL STRUCTURES Public/Granted day:2009-01-29
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