发明授权
- 专利标题: System and method for defect analysis of a substrate
- 专利标题(中): 衬底缺陷分析系统和方法
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申请号: US13673664申请日: 2012-11-09
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公开(公告)号: US08965102B2公开(公告)日: 2015-02-24
- 发明人: Yan-Wei Tien , Chi-Hung Liao , Ming-Yi Lee
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: G06K9/00
- IPC分类号: G06K9/00 ; G01N21/00 ; G06K9/03
摘要:
The present disclosure provides a method including providing a first image and a second image. The first image is of a substrate having a defect and the second image is of a reference substrate. A difference between the first image and the second image is determined. A simulation model is used to generate a simulation curve corresponding to the difference and the substrate dispositioned based on the simulation curve. In another embodiment, the scan of a substrate is used to generate a statistical process control chart.
公开/授权文献
- US20140133736A1 SYSTEM AND METHOD FOR DEFECT ANALYSIS OF A SUBSTRATE 公开/授权日:2014-05-15
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